It has been recently shown that manufacturing of an implanted-junction rectifier in a semiconductor heterostructure for optimal relationship between energy of implanted ions, materials and thicknesses of layers of the heterostructure after annealing of radiation defects gives us possibility to increase sharpness of p-n- junction and at the same time to increase homogeneity of dopant distribution in doped area [1,2]. In this paper we consider a possibility to decrease quantity of radiation defects, which were generated during ion implantation, using porous epitaxial layers of the heterostructure.