It has been recently shown, that manufacturing of an implanted-junction rectifier in a semiconductor heterostructure for optimal relation between annealing time of radiation defects, materials of the heterostructure and thicknesses of layers of the heterostructure and energy of implanted ions leads to increasing of sharpness of p-n-junction and at the same time to increasing of homogeneity of dopant distribution in doped area. In this paper we consider an approach of annealing of radiation defects to decrease quantity of radiation defects in comparison with standard of annealing. PACS number(s): 72.20. -i; 73.40.Kp; 73.40.Lq; 66.30. -h; 85.40.Ry