M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro and H. Iwai, "A 40 nm gate length nMOSFETs", IEEE Trans. Electron Devices, Vol. 42, p. 1822-30, 1995. CrossRef | |
Y. Taur, D. A. Buchanan, W. Chen, D. J. Frank, K. E. Ismail, S. H. Lo, G. A. Sai-Halasz, R. G Viswanathan, H. J. C. Warn, S. J. Wind, H. S. Wong, "CMOS scaling into the nanometer regime," Proceeding IEEE, Vol. 85, p. 486-504, 1997. CrossRef | |
S. H. Lo, D. A. Buchanan, Y. Taur, W. Wang, "Quantum-Mechanical Modeling of Electron Tunneling Current from the Inversion Layer of Ultra-Thin-Oxide nMOSFETs," IEEE Trans. Electron Device Letter, Vol. 18, p. 209-11, 1997. | |
J. A. Felix, D. M. Fleetwood, R. D. Schrimpf, J. G. Hong, G. Lucovsky, J. R. Schwank, and M. R. Shaneyfelt, "Total-dose radiation response of hafnium- silicate capacitors," IEEE Transactions on Nuclear Science, vol. 49, no. 6, pp. 3191-3196, Dec. 2002. CrossRef | |
J. A. Felix, M. R. Shaneyfelt, D. M. Fleetwood, T. L. Meisenheimer, J. R. Schwank, R. D. Schrimpf, P. E. Dodd, E. P. Gusev, and C. D' Emic, "Radiation-induced charge trapping in thin Al2O3/SiOxNy/Si(100) gate dielectric stacks," IEEE Transactions on Nuclear Science, vol. 50, no. 6, pp. 1910-1918, Dec. 2003. CrossRef | |
M. Houssa, G. Pourtois, M. M. Heyns and A. Stesmans, "Defect generation in high κ gate dielectric stacks under electrical stress: the impact of hydrogen," Journal of Physics: Condensed Matter, vol. 17, pp. s2075-s2088, 2005. CrossRef | |
E. P. Gusev, E. Cartier, D. A. Buchanan, M. Gribelyuk, M. Copel, H. Okorn-Schmidt, and C. D'Emic, "Ultrathin high-κ metal oxides on silicon: processing, characterization and integration issues," Microelectronic Engineering, vol. 59, no. 1-4, pp. 341-349, 2001. CrossRef | |
G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High-κ gate dielectrics: current status and materials properties considerations," Applied Physics Letters, vol. 89, pp. 5243-5275, 2001. | |
D. Park, Y. King, Q. Lu, T. J. King, C. Hu, A. Kalnitsky, S. P. Tay, C. C. Cheng, "Transistor characteristics with Ta2O5 gate dielectric," IEEE Trans. Electron Devices Letter, Vol. 19, p. 441-3, 1998. | |
X. Guo, X. Wang, Z. Juo, T. P. Ma, T. Tamagawa, "High-quality ultrathin (1.5 nm) TiO2/Si3N4 gate dielectric for deep sub-micron CMOS technology," IEDM Technical Digest, p. 137-140, 1999. | |
W. J. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, T. Ngai, S. Banerjee, J. C. Lee, "MOSCAP and MOSFET characteristics using ZrO2 gate dielectric deposited directly on Si," IEDM Technical Digest, p. 145-81, 1999. | |
B. H. Lee, L. Kang, W. J. Qi, R. Nieh, Y. Jeon, K. Onishi, J. C. Lee, "Ultrathin hafnium oxide with low leakage and excellent reliability for gate dielectric application," IEDM Technical Digest, p. 133-6, 1999. | |
G. D. Wilk, R. M. Wallace, J. M. Anthony, "Hafnium and zirconium silicates for advanced gate dielectrics," J. Appl. Phys., Vol. 87, p. 484-92, 2000. CrossRef | |
E. P. Gusev, C. Cabral, Jr., B. P. Linder, Y. H. Kim, K. Maitra, E. Cartier, H. Nayfeh, R. Amos, G. Biery, N. Bojarczuk, A. Callegari, R. Carruthers and Y. Zhang, "Advanced gate stacks with fully silicided (FUSI) gates and high-κ ?dielectrics: enhanced performance at reduced gate leakage," IEEE International Electron Devices Meeting (IEDM) Technical Digest, pp. 79-82, Dec. 2004. | |
A. Aziz, K. Kassami, Ka. Kassami, F. Olivie, "Modelling of the influence of charges trapped in the oxide on the I(Vg) characteristics of metal-ultra-thin oxide-semiconductor structures." Semicond. Sci. Technol. 19 (2004) 877-884. CrossRef | |
D. Heh, C.-D. Young, G.-A. Brown, P.-Y. Hung, E.-M. Vogel, J.-B. Bernstein, "Spatial distribution of trapping centers in HfO2/SiO2." Appl. Phys. Lett. 88 (2006) 152907. CrossRef | |
J. A. Felix, M. R. Shaneyfelt, D. M. Fleetwood, T. L. Meisenheimer, J. R. Schwank, R. D. Schrimpf, P. E. Dodd, E. P. Gusev, and C. D' Emic, "Radiation-induced charge trapping in thin Al2O3/SiOxNy/Si(100) gate dielectric stacks," IEEE Transactions on Nuclear Science, vol. 50, no. 6, pp. 1910-1918, Dec. 2003. CrossRef | |
F. Jiménez-Molinos, F. Gámiz, A. Palma, P. Cartujo, and J. A. López-Villanueva, "Direct and trap-assisted elastic tunneling through ultrathin gate oxides," J. Appl. Phys., Vol. 91, No. 8, April 2002, pp. 5116-5124. CrossRef | |
G. Lucovsky, Y. Wu, H. Niimi, V. Misra, C. Phillips, Appl. Phys. Lett. 74 1999 2005. CrossRef | |
V. Misra, Z. Wang, Y. Wu, H. Niimi, G. Lucovsky, J. J. Wortman, J. R. Hauser, J. Vac. Sci. Technol., B 17 (1999) 1836. CrossRef | |
Mains RK, Sun JP, Haddad GI. Observation of intrinsic bistability in resonant tunneling diode modeling. Appl Phys Lett. 1989; 55: 371-3. CrossRef | |
Sun JP, Mains RK, Chen WL, East JR, Haddad GI. C-V and I-V characteristics of quantum well varactors. J Appl Phys 1992; 72: 2340-6. CrossRef | |
Bogdan Govoreanu, Pieter Blomme, Kirklen Henson, Jan Van Houdt and Kristin De Meyer, "An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers." Solid-State Electronics vol. 48, year 2004, pp. 617-625. CrossRef | |
Yijie Zhao and Marvin H. White, "Modeling of direct tunneling current through interfacial oxide and high-K gate stacks." Solid-State Electronics vol. 48, Year 2004, pp. 1801-1807. CrossRef | |
Wei Wang, Ning Gu, J. P. Sun, P. Mazumder, "Gate current modeling of high-k stack nanoscale MOSFETs." Solid-State Electronics, vol. 50, year 2006, pp. 1489-1494. CrossRef | |
W. B. Chen, J. P. Xu, P. T. Lai, Y. P. Li, S. G. Xu, "Gate leakage properties of MOS devices with tri-layer high-k gate dielectric." Microelectronics Reliability, vol. 47, (2007), pp. 937-943. CrossRef | |
Register LF, Rosenbaum E, Yang K. Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices. Appl Phys Lett 1999; 74: 457-9. CrossRef | |
W.-C. Lee and C. Hu, "Modeling gate and substrate currents due to conduction- and valence-band electron and hole tunneling," Symposium on VLSI Technology Digest of Technical Papers, pp. 198, 2000. | |
W.-C. Lee and C. Hu, "Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling," IEEE Trans. Electron Devices, vol. 48, pp. 1366-1373, June 2001. CrossRef | |
L. E. Calvet, R. G. Wheeler, and M. A. Reed, Applied Physics Letters, vol. 80, No 10, March 2002. | |
Pr_egaldiny, Christophe Lallement, Daniel Mathiot," Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface potential-based MOSFET model," Solid-State Electronics. 48 (2004) 781-787. | |
Taur, Y., and Ning, T. H.: ‘Fundamentals of modern VLSI devices’ (Cambridge University Press, New York, 1998). | |
Chang-Hoon Choi, P. R. Chidambaram, Rajesh Khamankar, Charles F. Machala, Zhiping Yu, and Robert W. Dutton, "Dopant Profile and Gate Geometric Effects on Polysilicon Gate Depletion in Scaled MOS," IEEE Transactions on Electron Devices, vol. 49, no. 7, July 2002. | |
Steve Shao-Shiun Chung and Tung-Chi Li, IEEE Transactions On Electron Devices, Vol. 39, No. 3, March 1992. | |
Hitender Kumar Tyagi, and P. J. George, "Tunneling currents through ultra thin HfO2/Al2O3/HfO2 triple layer gate dielectrics for advanced MIS devices", J Mater Sci: Mater Electron (2008) 19: 902-907. CrossRef | |
S. Y. Chen, H. W. Chen, F. C. Chiu, C. H. Liu, Z. Y. Hsieh, H. S. Huang and H. L. Hwang, "Interfacial and Electrical Characterization of HfO2-Gated MOSCs and MOSFETs by C-V and Gated-Diode Method", ECS Trans., vol. 16, No. 5 October, 2008, pp. 131-138. | |
V. E. Drozd, A. P. Baraban and I. O. Nikiforova, "Electrical properties of Si—Al2O3 structures grown by ML-ALE," Applied Surface Science, Volumes 82-83, 2 December 1994, Pages 583-586. CrossRef | |
Park, Y. C. Jackson, W. B. Johnson, N. M. Hagstrom, S. B., "Spatial profiling of electron traps in silicon nitride thin films," Journal of Applied Physics, vol. 68, No 10, Nov 1990, pp. 5212-5221. CrossRef | |
A. V. Vishnyakov, Yu.N. Novikov, V. A. Gritsenko, K. A. Nasyrov, "The charge transport mechanism in silicon nitride: Multi-phonon trap ionization," Solid-State Electronics. vol. 53, No 3, March 2009, pp. 251-255. CrossRef | |
T. P. Ma, "Making Silicon Nitride Film a Viable Gate Dielectric," IEEE Transactions on Electron Devices, vol. 45, No. 3, March 1998, pp. 680-690. CrossRef | |
Katsuyuki Sekine, Yuji Saito, Masaki Hirayama, and Tadahiro Ohmi, "Highly Robust Ultrathin Silicon Nitride Films Grown at Low-Temperature by Microwave-Excitation High-Density Plasma for Giga Scale Integration," IEEE Transactions on Electron Devices, Vol. 47, No. 7, July 2000, pp. 1370-1374. CrossRef |
Gate Current Modeling and Optimization of High-k Gate Stack MOSFET Structure in Nano Scale Regime
Ashwani RanaRelated information
1 Department of Electronics and Communication, National Institute of Technology, Hamirpur, Hamirpur (H.P)-177005, India
, Narottam ChandRelated information2 Department of Computer Science and Engineering, National Institute of Technology, Hamirpur, Hamirpur (H.P.)-177005, India
, Vinod KapoorRelated information1 Department of Electronics and Communication, National Institute of Technology, Hamirpur, Hamirpur (H.P)-177005, India